On the laser detachment ofn-GaN films from substrates, based on the strong absorption of IR light by free charge carriers inn+-GaN substrates
Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Voronenkov, V. V., Rebane, Yu. T., Zubrilov, A. S., Gorbunov, R. I., Latyshev, P. E., Bochkareva, N. I., Lelikov, Yu. S., Tarhin, D. V., Smirnov, A. N.,Volume:
50
Langue:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782616050250
Date:
May, 2016
Fichier:
PDF, 867 KB
english, 2016
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