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Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
Eto, Kazuma, Suo, Hiromasa, Kato, Tomohisa, Okumura, HajimeVolume:
858
Langue:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.858.77
Date:
May, 2016
Fichier:
PDF, 1.94 MB
english, 2016