SPIE Proceedings [SPIE Microelectronic Manufacturing - Austin, TX (Wednesday 1 October 1997)] Microelectronic Device Technology - Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon
Obradovic, Borna J., Morris, Steven J., Morris, Michael F., Tian, Shiyang, Wang, Geng, Beardmore, K., Snell, Charles M., Jackson, J., Baummann, S., Tasch, Jr., Al F., Rodder, Mark, Tsuchiya, Toshiaki,Volume:
3212
Année:
1997
Langue:
english
DOI:
10.1117/12.284609
Fichier:
PDF, 427 KB
english, 1997
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