Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer
Maik Häberlen, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, Colin J. HumphreysVolume:
247
Année:
2010
Langue:
english
Pages:
4
DOI:
10.1002/pssb.200983537
Fichier:
PDF, 890 KB
english, 2010