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Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors
Van, Ngoc Huynh, Lee, Jae-Hyun, Whang, Dongmok, Kang, Dae JoonVolume:
8
Année:
2016
Langue:
english
Journal:
Nanoscale
DOI:
10.1039/c6nr01040g
Fichier:
PDF, 2.03 MB
english, 2016