Wet chemical MESA etching of InGaP and GaAs with solutions based on HCl, CH3COOH, and H2O2
D. Gregušová, P. Eliáš, L. Malacký, R. Kúdela, J. ŠkriniarováVolume:
151
Année:
1995
Langue:
english
Pages:
6
DOI:
10.1002/pssa.2211510113
Fichier:
PDF, 401 KB
english, 1995