TEM Study of the Molecular Effect in Phosphorus Implanted Silicon
T. S. Shi, A. De Veirman, J. Van Landuyt, G. Q. Yang, C. L. LinVolume:
120
Année:
1990
Langue:
english
Pages:
1
DOI:
10.1002/pssa.2211200247
Fichier:
PDF, 190 KB
english, 1990