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The influence of foreigen atoms on the epitaxial annealing of ion-implanted silicon
H. Kerkow, G. Kreysch, B. LukaschVolume:
82
Année:
1984
Langue:
english
Pages:
9
DOI:
10.1002/pssa.2210820115
Fichier:
PDF, 508 KB
english, 1984