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Deep Levels in Czochralski p-Si Due to Heat Treatment at 600 to 900 °C
K. Schmalz, P. Gaworzewski, F. -G. KirschtVolume:
81
Année:
1984
Langue:
english
Pages:
1
DOI:
10.1002/pssa.2210810256
Fichier:
PDF, 239 KB
english, 1984