Effect of interface and bulk traps on the C–V characterization of a LPCVD-SiN x /AlGaN/GaN metal-insulator-semiconductor structure
Bao, Qilong, Huang, Sen, Wang, Xinhua, Wei, Ke, Zheng, Yingkui, Li, Yankui, Yang, Chengyue, Jiang, Haojie, Li, Junfeng, Hu, Anqi, Yang, Xuelin, Shen, Bo, Liu, Xinyu, Zhao, ChaoVolume:
31
Langue:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/6/065014
Date:
June, 2016
Fichier:
PDF, 907 KB
english, 2016
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