Growth mechanism of an aluminium-induced solid phase epitaxial (AI-SPE) Si 0.5 Ge 0.5 layer using in situ heating transmission electron microscopy
Lin, Chuan-Jung, Hsu, Chien-Chung, Yu, Sheng-Min, Huang, Yu-Chun, Wei, Sung-Yen, Sun, Wen-Ching, Lin, Tzer-Shen, Chen, Fu-RongVolume:
18
Année:
2016
Langue:
english
Journal:
CrystEngComm
DOI:
10.1039/C6CE00657D
Fichier:
PDF, 2.33 MB
english, 2016