Characterization of Hot-Carrier-Induced RF-MOSFET Degradation at Different Bulk Biasing Conditions From $S$ -Parameters
Zarate-Rincon, Fabian, Garcia-Garcia, Daniel, Vega-Gonzalez, Victor H., Torres-Torres, Reydezel, Murphy-Arteaga, Roberto S.Volume:
64
Langue:
english
Journal:
IEEE Transactions on Microwave Theory and Techniques
DOI:
10.1109/tmtt.2015.2504090
Date:
January, 2016
Fichier:
PDF, 2.43 MB
english, 2016