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[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - How good is mono-layer transition-metal dichalcogenide tunnel field-effect transistors in sub-10 nm? — An ab initio simulation study
Jiang, Xiang-Wei, Luo, Jun-Wei, Li, Shu-Shen, Wang, Lin-WangAnnée:
2015
Langue:
english
DOI:
10.1109/iedm.2015.7409683
Fichier:
PDF, 404 KB
english, 2015