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[IEEE 2015 International Symposium on Next-Generation Electronics (ISNE) - Taipei, Taiwan (2015.5.4-2015.5.6)] 2015 International Symposium on Next-Generation Electronics (ISNE) - Measurement of photodarkening resistance in heavily Yb3+-doped silica and silicate fibers
Lee, Yin-Wen, Peng, Yu-Min, Jheng, Dong-Yo, Huang, Sheng-Lung, Chen, Shih-Ken, Jiang, ShibinAnnée:
2015
Langue:
english
DOI:
10.1109/isne.2015.7131957
Fichier:
PDF, 336 KB
english, 2015