
[IEEE 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) - Forth Worth, TX, USA (June 6-11, 2004)] 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535) - Over 65% efficiency 30MHz bandwidth C-band internally matched GaAs FET designed with a large-signal FET model
Otsuka, H., Mori, K., Yukawa, H., Minamide, H., Kittaka, Y., Tsunoda, T., Ogura, S., Ikeda, Y., Takagi, T.Volume:
2
Année:
2004
Langue:
english
DOI:
10.1109/mwsym.2004.1336030
Fichier:
PDF, 237 KB
english, 2004