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Effects of trap-assisted tunneling on gate-induced drain leakage in silicon–germanium channel p-type FET for scaled supply voltages
Tiwari, Vishal A., Divakaruni, Rama, Hook, Terence B., Nair, Deleep R.Volume:
55
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.04ED03
Date:
April, 2016
Fichier:
PDF, 2.12 MB
english, 2016