The Impact of Defects on GaN Device Behavior: Modeling Dislocations, Traps, and Pits
Moroz, Victor, Wong, Hiu Yung, Choi, Munkang, Braga, Nelson, Mickevicius, R. V., Zhang, Yuhao, Palacios, ThomasVolume:
5
Année:
2016
Langue:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0211604jss
Fichier:
PDF, 1.33 MB
english, 2016