The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method
Huang, Wei-Ching, Chu, Chung-Ming, Hsieh, Chi-Feng, Wong, Yuen-Yee, Chen, Kai-wei, Lee, Wei-I, Tu, Yung-Yi, Chang, Edward-Yi, Dee, Chang Fu, Majlis, B. Y., Yap, S. L.Volume:
45
Langue:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-015-4210-x
Date:
February, 2016
Fichier:
PDF, 1.74 MB
english, 2016
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