Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique
Yamanaka, Ryota, Kanazawa, Toru, Yagyu, Eiji, Miyamoto, YasuyukiVolume:
54
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.06FG04
Date:
June, 2015
Fichier:
PDF, 1.10 MB
english, 2015