LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas
V.V. Volkov, J. Van Landuyt, K. Marushkin, R. Gijbels, C. Férauge, M.G. Vasilyev, A.A. Shelyakin, A.A. SokolovskyVolume:
62
Année:
1997
Langue:
english
Pages:
9
DOI:
10.1016/s0924-4247(97)01377-0
Fichier:
PDF, 3.60 MB
english, 1997