Impact of defect on I(V) instabilities observed on Ti/4H–SiC high voltage Schottky diodes
Abdelwahed, N., Troudi, M., Sghaier, N., Souifi, A.Volume:
55
Langue:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.06.049
Date:
July, 2015
Fichier:
PDF, 607 KB
english, 2015