Silicon germanium heterojunction bipolar transistor electrostatic discharge power clamps and the Johnson Limit in RF BICMOS SiGe technology
Steven H Voldman, Brian Ronan, Patrick A Juliano, Alan Botula, David T Hui, Louis D LanzerottiVolume:
56
Année:
2002
Langue:
english
Pages:
22
DOI:
10.1016/s0304-3886(02)00064-5
Fichier:
PDF, 429 KB
english, 2002