[IEEE 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - Guilin, China (2014.10.28-2014.10.31)] 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS
Hu, Guang-Xi, Hu, Shu-Yan, Li, Pei-Cheng, Liu, Ran, Wang, Ling-Li, Zhou, XingAnnée:
2014
Langue:
english
DOI:
10.1109/ICSICT.2014.7021427
Fichier:
PDF, 1.06 MB
english, 2014