
Empirical Quantitative Modeling of Threshold Voltage of Sub-50-nm Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor
Tahara, Yuki, Omura, YasuhisaVolume:
45
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3074
Date:
April, 2006
Fichier:
PDF, 244 KB
english, 2006