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Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics
C. Ohshima, J. Taguchi, I. Kashiwagi, H. Yamamoto, S. Ohmi, H. IwaiVolume:
216
Année:
2003
Langue:
english
Pages:
5
DOI:
10.1016/s0169-4332(03)00439-2
Fichier:
PDF, 213 KB
english, 2003