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Ga0.47In0.53As field-effect transistors with a lattice-mismatched reduced leakage current GaAs gate
Garbinski, P.A., Chen, C.Y., Cho, A.Y.Volume:
22
Année:
1986
Langue:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19860162
Fichier:
PDF, 573 KB
english, 1986