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Theory of thermal Si oxide growth rate taking into account interfacial Si emission effects
H. Kageshima, M. Uematsu, K. ShiraishiVolume:
59
Année:
2001
Langue:
english
Pages:
9
DOI:
10.1016/s0167-9317(01)00614-1
Fichier:
PDF, 554 KB
english, 2001