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High- k Hf x Gd y O z Charge Trapping Layer in Silicon–Oxide–Nitride–Silicon Type Nonvolatile Memory by In situ Radio Frequency Dual-Sputtering Method
Chou, Pai-Chi, Lai, Chao-Sung, Wang, Jer-Chyi, Wu, Woei-Cherng, Liu, Li-Chi, Fang, Yu-Ching, Hsu, Li, Wang, Hui-ChunVolume:
48
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.05DF01
Date:
May, 2009
Fichier:
PDF, 315 KB
english, 2009