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Ge-Dot Formation on Si(111)-7 ×7 Surface with C Predeposition Using Monomethylsilane
Narita, Yuzuru, Sakai, Masashi, Murata, Takeshi, Endoh, Tetsuo, Suemitsu, MakiVolume:
44
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.L123
Date:
January, 2005
Fichier:
PDF, 191 KB
english, 2005