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Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions
B. L. Vanmil, R. E. Stahlbush, R. L. Myers-ward, K. Lew, C. R. Eddy, D. K. GaskillAnnée:
2008
Langue:
english
DOI:
10.1116/1.2918317
Fichier:
PDF, 635 KB
english, 2008