Controlling the interface charge density in GaN-based metal-oxide-semiconductor heterostructures by plasma oxidation of metal layers
Hahn, Herwig, Pécz, Béla, Kovács, András, Heuken, Michael, Kalisch, Holger, Vescan, AndreiVolume:
117
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4921867
Date:
June, 2015
Fichier:
PDF, 1.30 MB
english, 2015