AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)
Esteve, R., Lorenzzi, J., Reshanov, S. A., Jegenyes, N., Schöner, A., Ferro, G., Zetterling, C.-M., Ferro, Gabriel, Siffert, PaulAnnée:
2010
Langue:
english
DOI:
10.1063/1.3518310
Fichier:
PDF, 177 KB
english, 2010