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Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy
Yasuda, Arata, Suto, Ken, Takahashi, Yatsuhiro, Nishizawa, Jun-ichiVolume:
67
Langue:
english
Journal:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2014.10.002
Date:
November, 2014
Fichier:
PDF, 448 KB
english, 2014