Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions
Ohshima, Takeshi, Uedono, Akira, Itoh, Hisayoshi, Yoshikawa, Masahito, Kojima, Kazutoshi, Okada, Sohei, Nashiyama, Isamu, Bouwhuis, L., Tanigawa, Shoichiro, Frank, Thomas, Pensl, GerhardVolume:
338-342
Année:
2000
Langue:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.338-342.857
Fichier:
PDF, 392 KB
english, 2000