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[IEEE 6th International Conference on Solid-State and IC Technology - Shanghai, China (22-25 Oct. 2001)] 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) - Design considerations of the sub-50 nm self-aligned double gate MOSFET with a new channel doping profile
Yin Huaxiang,, Xu Qiuxia,Volume:
1
Année:
2001
Langue:
english
DOI:
10.1109/ICSICT.2001.981535
Fichier:
PDF, 247 KB
english, 2001