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Electrical properties of silicon nitride films grown on a SiGe layer by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition
E Dufour-Gergam, F Meyer, F Delmotte, M.C Hugon, B Agius, P Warren, D DutartreVolume:
294
Année:
1997
Pages:
3
DOI:
10.1016/s0040-6090(96)09264-4
Fichier:
PDF, 271 KB
1997