
A novel approach for the growth of μc-Si at a high rate over 3 nm/s
M. Tanda, M. Kondo, A. MatsudaVolume:
427
Année:
2003
Langue:
english
Pages:
4
DOI:
10.1016/s0040-6090(02)01177-x
Fichier:
PDF, 281 KB
english, 2003