Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2012 Vol. 30; Iss. 4
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Oxygen incorporation and dipole variation in tantalum nitride film used as metal-gate electrode
Lima, Lucas P. B., Diniz, José A., Doi, Ioshiaki, Miyoshi, Juliana, Silva, Audrey R., Godoy Fo, José, Radtke, ClaudioVolume:
30
Année:
2012
Langue:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4729599
Fichier:
PDF, 2.33 MB
english, 2012