High mobility strained Ge PMOSFETs with high- gate dielectric and metal gate on Si substrate
Donnelly, J.P., Kelly, D.Q., Garcia-Gutierrez, D.I., José-Yacamán, M., Banerjee, S.K.Volume:
44
Année:
2008
Langue:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20082558
Fichier:
PDF, 200 KB
english, 2008