
Simulation of Polarization Effect in GaN/AlN Resonant Tunneling Diode
Tang, Nai YunVolume:
774-776
Langue:
english
Journal:
Advanced Materials Research
DOI:
10.4028/www.scientific.net/AMR.774-776.691
Date:
September, 2013
Fichier:
PDF, 265 KB
english, 2013