Microstructure and electrical properties of gate SiO2 containing Ge nanoclusters for memory applications
H.-J Thees, M Wittmaack, K.-H Stegemann, J.v Borany, K.-H Heinig, T GebelVolume:
40
Année:
2000
Langue:
english
Pages:
5
DOI:
10.1016/s0026-2714(99)00330-3
Fichier:
PDF, 290 KB
english, 2000