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Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs
E. Atanassova, A. PaskalevaVolume:
42
Année:
2002
Langue:
english
Pages:
17
DOI:
10.1016/s0026-2714(01)00248-7
Fichier:
PDF, 561 KB
english, 2002