An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage
Rode, Johann C., Chiang, Han-Wei, Choudhary, Prateek, Jain, Vibhor, Thibeault, Brian J., Mitchell, William J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, FastenVolume:
3
Langue:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2014.2363178
Date:
January, 2015
Fichier:
PDF, 1.26 MB
english, 2015
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