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Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface
Jian-Ping Zhang, Dian-Zhao Sun, Xiao-Bing Li, Xiao-Liang Wang, Mei-Ying Kong, Yi-Ping Zeng, Jin-Min Li, Lan-Ying LinVolume:
201-202
Année:
1999
Langue:
english
Pages:
4
DOI:
10.1016/s0022-0248(98)01368-2
Fichier:
PDF, 128 KB
english, 1999