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InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
P. Hazdra, J. Voves, J. Oswald, E. Hulicius, J. Pangrác, T. ŠimečekVolume:
248
Année:
2003
Langue:
english
Pages:
5
DOI:
10.1016/s0022-0248(02)01823-7
Fichier:
PDF, 133 KB
english, 2003