HfO2 growth by low-pressure chemical vapor deposition using the Hf(N(C2H5)2)4/O2 gas system
Yoshio Ohshita, Atsushi Ogura, Asako Hoshino, Shigeki Hiiro, Hideaki MachidaVolume:
233
Année:
2001
Langue:
english
Pages:
6
DOI:
10.1016/s0022-0248(01)01502-0
Fichier:
PDF, 211 KB
english, 2001