Dopant Penetration Behavior of B-Doped P[sup +] Polycrystalline-Si[sub 0.73]Ge[sub 0.27]∕Al[sub 2]O[sub 3] or AlN–Al[sub 2]O[sub 3]∕n-Si Metal Insulator Semiconductor Capacitors
Lee, Chihoon, Park, Jaehoo, Cho, Moonju, Hong, Sug Hun, Hwang, Cheol Seong, Kim, Hyeong Joon, Jeong, JaehackVolume:
9
Année:
2006
Langue:
english
Journal:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.2162331
Fichier:
PDF, 402 KB
english, 2006