Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds
Sochacki, Tomasz, Amilusik, Mikolaj, Lucznik, Boleslaw, Fijalkowski, Michal, Weyher, Janusz Ludwik, Sadovyi, Bohdan, Kamler, Grzegorz, Nowak, Grzegorz, Litwin-Staszewska, Elzbieta, Khachapuridze, AlekVolume:
53
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.05FA04
Date:
May, 2014
Fichier:
PDF, 393 KB
english, 2014
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