An analytical threshold voltage model for dual-strained channel PMOSFET
Qin, Shan-Shan, Zhang, He-Ming, Hu, Hui-Yong, Dai, Xian-Ying, Xuan, Rong-Xi, Shu, BinVolume:
19
Langue:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/11/117309
Date:
November, 2010
Fichier:
PDF, 1.04 MB
english, 2010