Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study
Li, Pei-Cheng, Mei, Guang-Hui, Hu, Guang-Xi, Wang, Ling-Li, Liu, Ran, Tang, Ting-AoVolume:
58
Langue:
english
Journal:
Communications in Theoretical Physics
DOI:
10.1088/0253-6102/58/1/24
Date:
July, 2012
Fichier:
PDF, 467 KB
english, 2012